Dielectric function spectra at 40 K and critical-point energies for CuIn0.7Ga0.3Se2
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 26, 261903- p.Article in journal (Refereed) Published
We report ellipsometrically determined dielectric function ε spectra for CuIn0.7Ga0.3Se2 thin film at 40 and 300 K. The data exhibit numerous spectral features associated with interband critical points (CPs) in the spectral range from 0.74 to 6.43 eV. The second-energy-derivatives of ε further reveal a total of twelve above-bandgap CP features, whose energies are obtained accurately by a standard lineshape analysis. The ε spectra determined by ellipsometry show a good agreement with the results of full-potential linearized augmented plane wave calculations. Probable electronic origins of the CP features observed are discussed.
Place, publisher, year, edition, pages
2012. Vol. 101, no 26, 261903- p.
Interband Critical-Points, Temperature-Dependence, Spectroscopic Ellipsometry, Thin-Films, Electronic-Structure, Cuin1-Xgaxse2, Cuinse2
IdentifiersURN: urn:nbn:se:kth:diva-116662DOI: 10.1063/1.4773362ISI: 000312830700025ScopusID: 2-s2.0-84871730503OAI: oai:DiVA.org:kth-116662DiVA: diva2:600021
QC 201301232013-01-232013-01-222015-03-05Bibliographically approved