Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution
2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 87, no 4, 045404- p.Article in journal (Refereed) Published
The evolution of the structural and optical properties of a silicon core in oxidized nanowalls is investigated as a function of oxidation time. The same individual nanostructures are characterized after every oxidation step in a scanning electron microscope and by low-temperature photoluminescence, while a representative sample is also imaged in a transmission electron microscope. Analysis of a large number of recorded single-dot spectra and micrographs allows to identify delocalized and localized exciton emission from a nanowire as well as confined exciton emission of a nanocrystal. It is shown how structural transitions from one-to zero-dimensional confinement affect single-nanostructure optical fingerprints.
Place, publisher, year, edition, pages
American Physical Society , 2013. Vol. 87, no 4, 045404- p.
Self-Limiting Oxidation, Electron-Phonon, Si Nanocrystals, Photoluminescence, Cells
IdentifiersURN: urn:nbn:se:kth:diva-117635DOI: 10.1103/PhysRevB.87.045404ISI: 000313158600005ScopusID: 2-s2.0-84872242100OAI: oai:DiVA.org:kth-117635DiVA: diva2:602804
FunderSwedish Research Council
QC 201302042013-02-152013-02-012013-07-10Bibliographically approved