Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 21, 212106- p.Article in journal (Refereed) Published
We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013. Vol. 102, no 21, 212106- p.
Surface Recombination Velocity, Indium-Phosphide Nanowires, Wave-Guides, Superlattices, Luminescence, Spectroscopy, Passivation
Nano Technology Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-117747DOI: 10.1063/1.4808447ISI: 000320620400037ScopusID: 2-s2.0-84879115969OAI: oai:DiVA.org:kth-117747DiVA: diva2:602916
FunderSwedish Research Council, 349-2007-8664EU, FP7, Seventh Framework Programme, 248855Knut and Alice Wallenberg Foundation
QC 20130806. Updated from submitted to published.2013-02-042013-02-042013-08-06Bibliographically approved