Generation of substrate free III-V nanodisksfrom user-defined multilayer nanopillar arrays
(English)Article in journal (Other academic) Submitted
High material quality InP-based multilayer nanopillar (NP) arrays are fabricated using a combination of self-assembly of silica particles for mask generation and dry etching. In particular, the NP arrays are made from user-defined epitaxial multi-layer stacks with specific materials and layer thickness. Additional degree of flexibility in the structures is obtained by changing the lateral diameters of the NP multi-layer stacks. Pre-defined NP arrays made in InGaAsP/InP and InGaAs/InP NPs are then used to generate substrate-free nanodisks of a chosen material from the stack by selective etching. A soft-stamping method is demonstrated to transfer the generated nanodisks with arbitrary densities onto Si. It is shown that the transferred nanodisks retain their smooth surface morphologies and their designed geometrical dimensions. Both InP and InGaAsP nanodisks display excellent photo-luminescence properties, with line-widths comparable to unprocessed reference epitaxial layers of similar composition. The multilayer NP arrays are potentially attractive for broad-band absorption in third-generation solar-cells. The high optical quality, substrate-free InP and InGaAsP nanodisks on Si offer a new path to explore alternative ways to integrate III-V on Si by bonding nanodisks to Si. The method also has the advantage of re-usable III-V substrates for subsequent layer growth.
Nano Technology Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-117750OAI: oai:DiVA.org:kth-117750DiVA: diva2:602922
FunderSwedish Research Council, 349-2007-8664EU, FP7, Seventh Framework Programme, 248855
QS 20132013-02-042013-02-042013-02-05Bibliographically approved