Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model
2013 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 79, 172-178 p.Article in journal (Refereed) Published
We present a simple and efficient approach to implement Schottky barrier contacts in a Multi-subband Monte Carlo simulator by using the subband smoothening technique to mimic tunneling at the Schottky junction. In the absence of scattering, simulation results for Schottky barrier MOSFETs are in agreement with ballistic Non-Equilibrium Green's Functions calculations. We then include the most relevant scattering mechanisms, and apply the model to the study of double gate Schottky barrier MOSFETs representative of the ITRS 2015 high performance device. Results show that a Schottky barrier height of less than approximately 0.15 eV is required to outperform the doped source/drain structure.
Place, publisher, year, edition, pages
2013. Vol. 79, 172-178 p.
Metallic source/drain, Monte Carlo (MC) method, MOSFETs, Schottky barrier (SB)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-117778DOI: 10.1016/j.sse.2012.07.024ISI: 000313611000033ScopusID: 2-s2.0-84869500249OAI: oai:DiVA.org:kth-117778DiVA: diva2:603072
FunderSwedish Research CouncilEU, European Research Council, 228229
QC 201302052013-02-052013-02-052013-02-21Bibliographically approved