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Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
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2013 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 79, 172-178 p.Article in journal (Refereed) Published
Abstract [en]

We present a simple and efficient approach to implement Schottky barrier contacts in a Multi-subband Monte Carlo simulator by using the subband smoothening technique to mimic tunneling at the Schottky junction. In the absence of scattering, simulation results for Schottky barrier MOSFETs are in agreement with ballistic Non-Equilibrium Green's Functions calculations. We then include the most relevant scattering mechanisms, and apply the model to the study of double gate Schottky barrier MOSFETs representative of the ITRS 2015 high performance device. Results show that a Schottky barrier height of less than approximately 0.15 eV is required to outperform the doped source/drain structure.

Place, publisher, year, edition, pages
2013. Vol. 79, 172-178 p.
Keyword [en]
Metallic source/drain, Monte Carlo (MC) method, MOSFETs, Schottky barrier (SB)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-117778DOI: 10.1016/j.sse.2012.07.024ISI: 000313611000033Scopus ID: 2-s2.0-84869500249OAI: oai:DiVA.org:kth-117778DiVA: diva2:603072
Funder
Swedish Research CouncilEU, European Research Council, 228229
Note

QC 20130205

Available from: 2013-02-05 Created: 2013-02-05 Last updated: 2017-12-06Bibliographically approved

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Hellström, Per-Erik

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Output format
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