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Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2013 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 28, no 1, 17-22 p.Article in journal (Refereed) Published
Abstract [en]

The p-type doping of high purity semi-insulating 4H polytype silicon carbide (HPSI 4H-SiC) by aluminum ion (Al+) implantation has been studied in the range of 1 × 1019 to 8 × 10 20/cm3 (0.39 μm implanted thickness) and a conventional thermal annealing of 1950 °C/5 min. Implanted 4H-SiC layers of p-type conductivity and sheet resistance in the range of 1.6 × 104 to 8.9 ×102 Ω□, corresponding to a resistivity in the range of 4.7 × 10-1 to 2.7 × 10-2 Ω cm have been obtained. Hall carrier density and mobility data in the temperature range of 140-720 K feature the transition from a valence band to an intraband conduction for increasing implanted Al ion concentration from 1 × 10 19/cm3 to 4 × 1020/cm3. A 73% electrical activation, 31% compensation and 146 meV ionization level have been obtained using a best-fit solution of the neutrality equation to Hall carrier data for the lowest concentration.

Place, publisher, year, edition, pages
2013. Vol. 28, no 1, 17-22 p.
Keyword [en]
dopant, electrical properties, ion implantation
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-118207DOI: 10.1557/jmr.2012.207ISI: 000313589600003ScopusID: 2-s2.0-84872298220OAI: diva2:605105

QC 20130213

Available from: 2013-02-13 Created: 2013-02-13 Last updated: 2013-02-14Bibliographically approved

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