Quantum Mechanical TCAD Study of Epitaxial SiGe Thermistor Layers
2012 (English)In: Simulation of Semiconductor Processes and Devices (SISPAD), 2012 International Conference on, 2012, 173-176 p.Conference paper (Refereed)
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors.
Place, publisher, year, edition, pages
2012. 173-176 p.
SiGe profile, detector, quantum-mechanical
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-118266OAI: oai:DiVA.org:kth-118266DiVA: diva2:605407
Simulation of Semiconductor Processes and Devices (SISPAD)
QC 201305212013-02-142013-02-142015-03-04Bibliographically approved