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Quantum Mechanical TCAD Study of Epitaxial SiGe Thermistor Layers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. (EKT)ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits. (EKT)
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-9820-8728
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-0525-8647
2012 (English)In: Simulation of Semiconductor Processes and Devices (SISPAD), 2012 International Conference on, 2012, 173-176 p.Conference paper, Published paper (Refereed)
Abstract [en]

The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions yielded similar results, TCR around 2%/K at 300 K. This modeling approach can be used for different, graded and constant, SiGe profiles,. It is also capable of predicting the influence of background auto-doping on the TCR of the detectors.

Place, publisher, year, edition, pages
2012. 173-176 p.
Keyword [en]
SiGe profile, detector, quantum-mechanical
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-118266OAI: oai:DiVA.org:kth-118266DiVA: diva2:605407
Conference
Simulation of Semiconductor Processes and Devices (SISPAD)
Funder
VINNOVA
Note

QC 20130521

Available from: 2013-02-14 Created: 2013-02-14 Last updated: 2015-03-04Bibliographically approved

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Malm, GunnarForsberg, FredrikNiklaus, Frank

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