Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics
2013 (English)In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, IEEE , 2013, 81-84 p.Conference paper (Refereed)
InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and uniform over the entire patterned area on both substrates. The measured diagonal of the top surface is 30 nm and 90 nm for the nanopyramidal frusta grown from 120 nm and 300 nm diameter openings, respectively. The size and morphology as well as the optical quality of these pyramidal frusta make them suitable templates for quantum dot structures for nano photonics and silicon photonics.
Place, publisher, year, edition, pages
IEEE , 2013. 81-84 p.
, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Growth, Dislocations, Dependence, Laser
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-118425DOI: 10.1109/ICIPRM.2012.6403324ISI: 000316822700023ScopusID: 2-s2.0-84873156451ISBN: 978-146731725-2OAI: oai:DiVA.org:kth-118425DiVA: diva2:606051
2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012, 27 August 2012 through 30 August 2012, Santa Barbara, CA
QC 201302182013-02-182013-02-182013-05-14Bibliographically approved