Source-drain scaling of ion-implanted InAs/AlSb HEMTs
2012 (English)In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, IEEE , 2012, 57-60 p.Conference paper (Refereed)
We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and T of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.
Place, publisher, year, edition, pages
IEEE , 2012. 57-60 p.
, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
InAs/AlSb HEMT, ion implantation, lateral scaling, low-power, MMIC, oxidation resistant
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-118387DOI: 10.1109/ICIPRM.2012.6403318ScopusID: 2-s2.0-84873174048ISBN: 978-146731725-2OAI: oai:DiVA.org:kth-118387DiVA: diva2:606268
2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012, 27 August 2012 through 30 August 2012, Santa Barbara, CA
QC 201302182013-02-182013-02-182013-02-18Bibliographically approved