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Source-drain scaling of ion-implanted InAs/AlSb HEMTs
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
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2012 (English)In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, IEEE , 2012, 57-60 p.Conference paper (Refereed)
Abstract [en]

We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and T of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.

Place, publisher, year, edition, pages
IEEE , 2012. 57-60 p.
, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Keyword [en]
InAs/AlSb HEMT, ion implantation, lateral scaling, low-power, MMIC, oxidation resistant
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-118387DOI: 10.1109/ICIPRM.2012.6403318ScopusID: 2-s2.0-84873174048ISBN: 978-146731725-2OAI: diva2:606268
2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012, 27 August 2012 through 30 August 2012, Santa Barbara, CA

QC 20130218

Available from: 2013-02-18 Created: 2013-02-18 Last updated: 2013-02-18Bibliographically approved

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Hallén, Anders
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