Atomic layer deposition-based interface engineering for high-k/metal gate stacks
2012 (English)In: ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE , 2012, 6467643- p.Conference paper (Refereed)
This review will discuss the in-situ surface engineering of active channel surfaces prior to or during the ALD high-k/metal gate deposition process. We will show that by carefully choosing ALD in-situ pre-treatment methods and precursor chemistries relevant electrical properties for future high-k dielectrics can be improved. Different high-k dielectrics such as Hafnium-Oxide (HfO2), Aluminum-Oxide (Al2O3), Lanthanum-Lutetium-Oxide (LaLuO3) and Lanthanum-Oxide (La 2O3) for CMOS-based device technology are investigated in combination with Silicon (Si) and Germanium (Ge) substrates. Additionally, the use of ALD for deposition of a high-k dielectric gate stack on Graphene is discussed.
Place, publisher, year, edition, pages
IEEE , 2012. 6467643- p.
Deposition process, Device technologies, High-k dielectric, High-k/metal gates, Interface engineering, Precursor chemistry, Pretreatment methods, Surface engineering
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-119905DOI: 10.1109/ICSICT.2012.6467643ISI: 000319824700142ScopusID: 2-s2.0-84874862058ISBN: 978-146732472-4OAI: oai:DiVA.org:kth-119905DiVA: diva2:612971
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, 29 October 2012 through 1 November 2012, Xi'an, China
QC 201303262013-03-262013-03-252013-12-06Bibliographically approved