A new physics-based circuit model for 4H-SiC power diodes implemented in SABER
2001 (English)In: Proc. of the Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2001, APEC 2001, vol. 2, 4-8 March 2001. / [ed] IEEE, 2001, 989-994 p.Conference paper (Refereed)
A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents.
Place, publisher, year, edition, pages
2001. 989-994 p.
2.5 kV, 400 A, 4H-SiC power diodes, MAST modeling language, SABER, SiC, approximations, computer simulation, physics-based circuit model, turn-off transients, turn-on transients
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-120088DOI: 10.1109/APEC.2001.912487OAI: oai:DiVA.org:kth-120088DiVA: diva2:613359
NR 201408052013-03-272013-03-272013-03-27Bibliographically approved