An experimentally validated electro-thermal compact model for 4H-SiC power diodes
2001 (English)In: Proc. of IEEE International Symposium on Industrial Electronics ISIE, 12-16 June 2001, vol. 2. / [ed] IEEE, 2001, 1345-1350 p.Conference paper (Refereed)
The implementation of a circuit-oriented model for high-current, high-voltage 4H-SiC power diodes is presented. The compact modeling technique used presents a good trade-off between accuracy and speed for modeling of bipolar power devices, and a high flexibility for inclusion of various physical models. Implementation in the SABER circuit simulator of the model is performed using the MAST hardware description language (HDL). Up-to-date physical models for 4H-SiC semiconductor materials including thermal dependence, which are relevant for the device switching behavior are evaluated and implemented in the compact model. Simulation results using the proposed model are compared to both measurements and device simulations on 2.5 kV, 400 A Si-IGBT/4H-SiC diode modules from ABB at various circuit and temperature conditions. The model has proven to be a valuable simulation tool for investigation of future power circuit designs based on SiC technology.
Place, publisher, year, edition, pages
2001. 1345-1350 p.
2.5 kV, 400 A, 4H-SiC power diodes, 4H-SiC semiconductor materials, H-SiC, MAST hardware description language, SABER circuit simulator, bipolar power devices, circuit-oriented model, compact modeling technique, device switching behavior, electro-thermal compact model, modelling accuracy, modelling speed, thermal dependence
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-120089DOI: 10.1109/ISIE.2001.931677OAI: oai:DiVA.org:kth-120089DiVA: diva2:613364
NR 201408052013-03-272013-03-272013-03-27Bibliographically approved