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Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2013 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 531, 61-69 p.Article in journal (Refereed) Published
Abstract [en]

The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 × 7 surface periodicity at 0.07 ML and a single 3×3 phase at 0.3 ML around 440-470 C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 × 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH3 at ~ 480 C, besides the nitridation of the In droplets, the N radicals also dissociated the InSi bonds to form SiN. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets.

Place, publisher, year, edition, pages
2013. Vol. 531, 61-69 p.
Keyword [en]
Droplet epitaxy, Indium, Low-energy electron microscopy, Nitridation, Silicon (111), Spectroscopic photoemission microscopy
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-121009DOI: 10.1016/j.tsf.2012.12.022ISI: 000316677900008ScopusID: 2-s2.0-84875471710OAI: diva2:616846

QC 20130419

Available from: 2013-04-19 Created: 2013-04-16 Last updated: 2013-08-28Bibliographically approved

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Göthelid, Mats
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