Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization
2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 10, 104310- p.Article in journal (Refereed) Published
The present study examines the kinetics of dry thermal oxidation of (111), (110), and (100) silicon-germanium (SiGe) thin epitaxial films and the redistribution of Ge near the oxidation interface with the aim of facilitating construction of single and multi-layered nano-structures. By employing a series of multiple and single step oxidations, it is shown that the paramount parameter controlling the Ge content at the oxidation interface is the oxidation temperature. The oxidation temperature may be set such that the Ge content at the oxidation interface is increased, kept static, or decreased. The Ge content at the oxidation interface is modeled by considering the balance between Si diffusion in SiGe and the flux of Si into the oxide by formation of SiO2. The diffusivity of Si in SiGe under oxidation is determined for the three principal crystal orientations by combining the proposed empirical model with data from X-ray diffraction and variable angle spectroscopic ellipsometry. The orientation dependence of the oxidation rate of SiGe was found to follow the order: (111) > (110) > (100). The role of crystal orientation, Ge content, and other factors in the oxidation kinetics of SiGe versus Si are analyzed and discussed in terms of relative oxidation rates.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013. Vol. 113, no 10, 104310- p.
Dry thermal oxidations, Orientation dependence, Oxidation kinetics, Oxidation temperature, Self organizations, Silicon Germanium, Thin epitaxial films, Variable angle spectroscopic ellipsometry
IdentifiersURN: urn:nbn:se:kth:diva-121117DOI: 10.1063/1.4794991ISI: 000316565600057ScopusID: 2-s2.0-84875202029OAI: oai:DiVA.org:kth-121117DiVA: diva2:617064
QC 201304222013-04-222013-04-192013-04-22Bibliographically approved