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Optical properties of extended and localized states in m-plane InGaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-4606-4865
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 10, 101102- p.Article in journal (Refereed) Published
Abstract [en]

Scanning near-field and time-resolved photoluminescence spectroscopy were applied to study potential fluctuations and photoexcited carrier dynamics in single m-plane InGaN quantum well structures. The far-and near-field spectra were found to have contributions from transitions to the first and second hole levels in the extended states, and transitions in the localized states. Correlations between parameters of the near-field spectra confirmed that extended state luminescence was prevailing. The localized states, which were found to be separated from the extended states by similar to 10 meV barriers, were attributed to regions of a higher In content.

Place, publisher, year, edition, pages
2013. Vol. 102, no 10, 101102- p.
Keyword [en]
Hole levels, InGaN quantum wells, Localized state, M-plane, Near-field, Photoexcited carriers, Potential fluctuations, Time-resolved photoluminescence spectroscopy
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Identifiers
URN: urn:nbn:se:kth:diva-121477DOI: 10.1063/1.4794904ISI: 000316501200002Scopus ID: 2-s2.0-84875132804OAI: oai:DiVA.org:kth-121477DiVA: diva2:619140
Funder
Knut and Alice Wallenberg Foundation
Note

QC 20130502

Available from: 2013-05-02 Created: 2013-04-29 Last updated: 2017-12-06Bibliographically approved

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Marcinkevicius, Saulius

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