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Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In2-xVxO3
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2009 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 79, no 20, 205203- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of In2-xVxO3 (x=0.08) has been investigated by photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The V 2p core-level photoemission and XAS spectra revealed that the V ion is in the trivalent state, which is the same valence state as that of In in In2O3. The V 3d partial density of states obtained by the resonant photoemission technique showed a sharp peak above the O 2p band. While the O 1s XAS spectrum of In2-xVxO3 was similar to that of In2O3, there were differences in the In 3p and 3d XAS spectra between the V-doped and pure In2O3. The observations give clear evidence for hybridization between the In-derived conduction band and the V 3d orbitals in In2-xVxO3.

Place, publisher, year, edition, pages
2009. Vol. 79, no 20, 205203- p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-121683DOI: 10.1103/PhysRevB.79.205203ISI: 000208476100001ScopusID: 2-s2.0-66749123637OAI: diva2:619914

QC 20130507

Available from: 2013-05-07 Created: 2013-05-03 Last updated: 2013-05-07Bibliographically approved

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Gupta, AmitaCao, HongtaoRao, K. Venkat
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