Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots
2013 (English)In: Infrared physics & technology, ISSN 1350-4495, Vol. 59, 89-92 p.Article in journal (Refereed) Published
We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.
Place, publisher, year, edition, pages
2013. Vol. 59, 89-92 p.
InGaSb, QD, MOVPE, LWIR
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-122437DOI: 10.1016/j.infrared.2012.12.020ISI: 000320974800016ScopusID: 2-s2.0-84878345768OAI: oai:DiVA.org:kth-122437DiVA: diva2:622361
QC 201308162013-05-212013-05-212013-08-16Bibliographically approved