A Graphene-Based Hot Electron Transistor
2013 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 13, no 4, 1435-1439 p.Article in journal (Refereed) Published
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10(4).
Place, publisher, year, edition, pages
2013. Vol. 13, no 4, 1435-1439 p.
Graphene, transistor, hot electrons, hot carrier transport, tunneling
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-122342DOI: 10.1021/nl304305xISI: 000317549300012ScopusID: 2-s2.0-84876059579OAI: oai:DiVA.org:kth-122342DiVA: diva2:622474
FunderEU, European Research Council, 228229EU, European Research Council, 307311
QC 201305222013-05-222013-05-202016-05-03Bibliographically approved