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A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
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2013 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 23, no 15, 1919-1922 p.Article in journal (Refereed) Published
Abstract [en]

A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field-independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first-order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field-dependent population of up and down domains in the free layer.

Place, publisher, year, edition, pages
2013. Vol. 23, no 15, 1919-1922 p.
Keyword [en]
multilevel memory, giant magnetoresistance, magnetic domains, spintronic memristor, graded anisotropy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-122325DOI: 10.1002/adfm.201202319ISI: 000317690800008Scopus ID: 2-s2.0-84876255957OAI: oai:DiVA.org:kth-122325DiVA: diva2:622504
Funder
Swedish Foundation for Strategic Research Swedish Research CouncilKnut and Alice Wallenberg Foundation
Note

QC 20130522

Available from: 2013-05-22 Created: 2013-05-20 Last updated: 2017-12-06Bibliographically approved

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