A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States
2013 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 23, no 15, 1919-1922 p.Article in journal (Refereed) Published
A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field-independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first-order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field-dependent population of up and down domains in the free layer.
Place, publisher, year, edition, pages
2013. Vol. 23, no 15, 1919-1922 p.
multilevel memory, giant magnetoresistance, magnetic domains, spintronic memristor, graded anisotropy
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-122325DOI: 10.1002/adfm.201202319ISI: 000317690800008ScopusID: 2-s2.0-84876255957OAI: oai:DiVA.org:kth-122325DiVA: diva2:622504
FunderSwedish Foundation for Strategic Research Swedish Research CouncilKnut and Alice Wallenberg Foundation
QC 201305222013-05-222013-05-202013-05-22Bibliographically approved