Room-temperature operation of transistor vertical-cavity surface-emitting laser
2013 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 49, no 3, 208-209 p.Article in journal (Refereed) Published
The first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50 degrees C.
Place, publisher, year, edition, pages
2013. Vol. 49, no 3, 208-209 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-122993DOI: 10.1049/el.2012.4243ISI: 000318542500030ScopusID: 2-s2.0-84877727168OAI: oai:DiVA.org:kth-122993DiVA: diva2:624265
FunderSwedish Research Council
QC 201306052013-05-302013-05-302015-03-03Bibliographically approved