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Towards optical hyperdoping of binary oxide semiconductors
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
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2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 14, 143512- p.Article in journal (Refereed) Published
Abstract [en]

Surface structuring with ultrashort laser pulses is of high interest as a scalable doping technique as well as for surface nanostructuring applications. By depositing a layer of antimony before the irradiation of ZnO, we were able to incorporate a large quantity of Sb atoms into the single crystalline region of the laser modified surface for potential p-type doping. We have studied the incorporation of antimony and the material properties of laser-induced periodic surface structures (LIPSS) on c-plane ZnO upon femtosecond laser processing at two different peak fluences. We observe high spatial frequency LIPSS with structure periods from 200-370 nm and low spatial frequency LIPSS with periods of 600-700 nm. At a fluence of 0.8 J/cm(2), close the ablation threshold of ZnO, the LIPSS are single crystalline except for a few nanometers of amorphous material. At a peak laser fluence of 3.1 J/cm(2), they consist of polycrystalline and single crystalline ZnO areas. However, the polycrystalline part dominates with a thickness of about 500 nm.

Place, publisher, year, edition, pages
2013. Vol. 113, no 14, 143512- p.
Keyword [en]
Femtosecond-Laser-Pulses, Microstructured Silicon, Infrared-Absorption, Zno, Irradiation, Surface
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URN: urn:nbn:se:kth:diva-123631DOI: 10.1063/1.4801531ISI: 000318250600029Scopus ID: 2-s2.0-84876382849OAI: oai:DiVA.org:kth-123631DiVA: diva2:629420
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QC 20130617

Available from: 2013-06-17 Created: 2013-06-13 Last updated: 2017-12-06Bibliographically approved

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CiteExportLink to record
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  • apa
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