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Diffusion of Fe and Na in co-evaporated Cu(In, Ga) Se-2 devices on steel substrates
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
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2013 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 535, 188-192 p.Article in journal (Refereed) Published
Abstract [en]

In this work we study impurity diffusion into Cu(In, Ga) Se-2 from stainless steel substrates with and without Cr diffusion barriers using secondary ion mass spectrometry. For these substrate configurations we compare cases with and without adding NaF as a sodium precursor. A clear increase in impurity diffusion from the substrate is observed for samples with NaF. Devices made using our micro pilot line show the expected correlation between Fe content, Na content and efficiency, but the highest device efficiency obtained for steel substrates is still slightly below that of the glass substrate reference. We discuss reasons for the observed device performance.

Place, publisher, year, edition, pages
2013. Vol. 535, 188-192 p.
Keyword [en]
Copper indium gallium selenide, Steel substrate, Sodium fluoride
National Category
Physical Sciences Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-124463DOI: 10.1016/j.tsf.2012.11.067ISI: 000318973600042Scopus ID: 2-s2.0-84878181433OAI: oai:DiVA.org:kth-124463DiVA: diva2:636164
Conference
Symposium B on Thin Film Chalcogenide Photovoltaic Materials of the 11th E-MRS Spring Meetings, MAY, 2012, Strasbourg, FRANCE
Note

QC 20130709

Available from: 2013-07-09 Created: 2013-07-05 Last updated: 2017-12-06Bibliographically approved

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Linnarsson, Margareta K.

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