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Generation of substrate-free III-V nanodisks from user-defined multilayer nanopillar arrays for integration on Si
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
2013 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 24, no 22, 225301- p.Article in journal (Refereed) Published
Abstract [en]

High material quality InP-based multilayer nanopillar (NP) arrays are fabricated using a combination of self-assembly of silica particles for mask generation and dry etching. In particular, the NP arrays are made from user-defined epitaxial multilayer stacks with specific materials and layer thicknesses. An additional degree of flexibility in the structures is obtained by changing the lateral diameters of the NP multilayer stacks. Pre-defined NP arrays made from InGaAsP/InP and InGaAs/InP NPs are then used to generate substrate-free nanodisks of a chosen material from the stack by selective etching. A soft-stamping method is demonstrated to transfer the generated nanodisks with arbitrary densities onto Si. The transferred nanodisks retain their smooth surface morphologies and their designed geometrical dimensions. Both InP and InGaAsP nanodisks display excellent photoluminescence properties, with line-widths comparable to unprocessed reference epitaxial layers of similar composition. The multilayer NP arrays are potentially attractive for broad-band absorption in third-generation solar cells. The high optical quality, substrate-free InP and InGaAsP nanodisks on Si offer a new path to explore alternative ways to integrate III-V on Si by bonding nanodisks to Si. The method also has the advantage of re-usable III-V substrates for subsequent layer growth.

Place, publisher, year, edition, pages
2013. Vol. 24, no 22, 225301- p.
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-124445DOI: 10.1088/0957-4484/24/22/225301ISI: 000319326600006Scopus ID: 2-s2.0-84877766354OAI: oai:DiVA.org:kth-124445DiVA: diva2:636465
Funder
Swedish Research CouncilEU, European Research Council
Note

QC 20130710

Available from: 2013-07-10 Created: 2013-07-05 Last updated: 2017-12-06Bibliographically approved

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