Exciton lifetime measurements on single silicon quantum dots
2013 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 24, no 22, 225204- p.Article in journal (Refereed) Published
We measured the exciton lifetime of single silicon quantum dots, fabricated by electron beam lithography, reactive ion etching and oxidation. The observed photoluminescence decays are of mono-exponential character with a large variation (5-45 mu s) from dot to dot, even for the same emission energy. We show that this lifetime variation may be the origin of the heavily debated non-exponential (stretched) decays typically observed for ensemble measurements.
Place, publisher, year, edition, pages
2013. Vol. 24, no 22, 225204- p.
IdentifiersURN: urn:nbn:se:kth:diva-124446DOI: 10.1088/0957-4484/24/22/225204ISI: 000319326600005ScopusID: 2-s2.0-84877760460OAI: oai:DiVA.org:kth-124446DiVA: diva2:636484
FunderSwedish Research Council
QC 201307102013-07-102013-07-052015-10-01Bibliographically approved