The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO2
2013 (English)In: Advanced Etch Technology for Nanopatterning II, SPIE - International Society for Optical Engineering, 2013, 86850W- p.Conference paper (Refereed)
Electronics advancement demands integration of large number of transistors /capacitors in a very small chip area. Thus, small feature size fabrication is a critical issue and precise fabrications of features under nano scale require advanced lithographic and etching techniques. In this paper, MOS capacitor with TiN metal-gate and HfO2 dielectric layer was fabricated in a world class clean-room lab in KTH. There, state-of-the art lithography stepper, advanced etching machines and all important clean-room fabrication facilities were used for successful fabrication of the nano-dimension MOS capacitor, whose detailed experimental procedures and results are exhaustively dealt in this report.
Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2013. 86850W- p.
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 8685
Critical issues, Etching technique, Experimental procedure, HfO2 dielectric, Precise fabrications, Small chip area, Small features, State of the art, Dielectric devices, Etching, Hafnium oxides, MOS capacitors, Fabrication
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-124930DOI: 10.1117/12.2020003ISI: 000322989800024ScopusID: 2-s2.0-84878430993ISBN: 978-081949467-2OAI: oai:DiVA.org:kth-124930DiVA: diva2:638702
2nd Advanced Etch Technology for Nanopatterning Conference, AETNC 2013, 25 February 2013 through 26 February 2013, San Jose, CA
QC 201308012013-08-012013-08-012013-09-16Bibliographically approved