Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials
2013 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 42, no 7, 1956-1959 p.Article in journal (Refereed) Published
Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion for the middle to high range of temperature. These materials are very attractive for TE research because of the abundance of their constituent elements in the Earth's crust. Mg2Si could replace lead-based TE materials, due to its low cost, nontoxicity, and low density. In this work, the role of aluminum doping (Mg2Si:Al = 1:x for x = 0.005, 0.01, 0.02, and 0.04 molar ratio) in dense Mg2Si materials was investigated. The synthesis process was performed by planetary milling under inert atmosphere starting from commercial Mg2Si pieces and Al powder. After ball milling, the samples were sintered by means of spark plasma sintering to density > 95%. The morphology, composition, and crystal structure of the samples were characterized by field-emission scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction analyses. Moreover, Seebeck coefficient analyses, as well as electrical and thermal conductivity measurements were performed for all samples up to 600A degrees C. The resultant estimated ZT values are comparable to those reported in the literature for these materials. In particular, the maximum ZT achieved was 0.50 for the x = 0.01 Al-doped sample at 600A degrees C.
Place, publisher, year, edition, pages
New York: Springer, 2013. Vol. 42, no 7, 1956-1959 p.
Magnesium silicide, aluminum, thermoelectricity
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-125565DOI: 10.1007/s11664-013-2482-6ISI: 000320890800106ScopusID: 2-s2.0-84879795351OAI: oai:DiVA.org:kth-125565DiVA: diva2:640021
FunderSwedish Foundation for Strategic Research
QC 201308122013-08-122013-08-092014-09-18Bibliographically approved