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Mask Effects on Resist Variability in Extreme Ultraviolet Lithography
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2013 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 52, no 6, UNSP 06GC02- p.Article in journal (Refereed) Published
Abstract [en]

Resist variability is one of the challenges that must to be solved in extreme UV lithography. One of the root causes of the resist roughness are the mask contributions. Three different effects may plays a non-negligible role: mask pattern roughness transfer-or mask line edge roughness, speckle effects caused by mask surface roughness, and mask layout which causes local flare amplification at wafer level. In this paper, mask contributions to the pattern variability are individually assessed experimentally and via stochastic simulations for both lines/spaces and contact holes. It was found that the predominant effect is the mask layout, while the speckle contribution is barely detectable.

Place, publisher, year, edition, pages
2013. Vol. 52, no 6, UNSP 06GC02- p.
Keyword [en]
Line-Edge Roughness, Metrics, Impact, UV
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URN: urn:nbn:se:kth:diva-125763DOI: 10.7567/JJAP.52.06GC02ISI: 000321059300007Scopus ID: 2-s2.0-84881012036OAI: oai:DiVA.org:kth-125763DiVA: diva2:640618
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QC 20130814

Available from: 2013-08-14 Created: 2013-08-13 Last updated: 2017-12-06Bibliographically approved

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Garidis, Konstantinos

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