CuSbS2 and CuBiS2 as potential absorber materials for thin-film solar cells
2013 (English)In: Journal of Renewable and Sustainable Energy, ISSN 1941-7012, Vol. 5, no 3, 031616- p.Article in journal (Refereed) Published
The current thin-film photovoltaic (PV) technologies are dominated by CdTe and Cu(In,Ga)Se-2 compounds. However, due to the limited availably and toxicity of the elements in these technologies, the current research efforts are directed to search alternative earth abundant materials. Therefore, in this work, we analyze the CuSbS2 and CuBiS2 compounds as alternative absorber materials for future thin-film solar cells. Employing a first-principles approach within the density functional theory, we calculate the structural, electronic, and optical properties of CuSbS2 and CuBiS2 compounds. We show that these compounds have indirect fundamental band gap E-g = 1.5-1.7 eV. The indirect gap nature is different from the previous experimental measurements. However, due to the flat bands, the direct gap E-dg = 1.6-1.8 eV is suitable for solar energy technologies. Furthermore, calculations reveal that these compounds have strong absorption coefficients, which are about twice as large as in other Cu-S based PV materials like CuInS2 and Cu2ZnSnS4. Therefore, CuSbS2 and CuBiS2 have the potential to be used as absorber materials in thin-film PV technologies.
Place, publisher, year, edition, pages
2013. Vol. 5, no 3, 031616- p.
Earth-abundant materials, First-principles approaches, Fundamental band gap, Indirect-gap nature, Photovoltaic technology, Solar energy technologies, Strong absorptions, Thin-film solar cells
IdentifiersURN: urn:nbn:se:kth:diva-125769DOI: 10.1063/1.4812448ISI: 000321152400018ScopusID: 2-s2.0-84879906892OAI: oai:DiVA.org:kth-125769DiVA: diva2:640751
International Conference on Solar Energy Photovoltaic, 2012, Bhubaneswar, India
QC 201308142013-08-142013-08-132013-08-14Bibliographically approved