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Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Material Physics, MF.
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2013 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 88, no 4, 045319- p.Article in journal (Refereed) Published
Abstract [en]

The behavior of hydrogen on the 110 surfaces of III-V semiconductors is examined using ab initio density functional theory. It is confirmed that adsorbed hydrogen should lead to a charge accumulation layer in the case of InAs, but shown here that it should not do so for other related III-V semiconductors. It is shown that the hydrogen levels due to surface adsorbed hydrogen behave in a material dependent manner related to the ionicity of the material, and hence do not line up in the universal manner reported by others for hydrogen in the bulk of semiconductors and insulators. This fact, combined with the unusually deep Gamma point conduction band well of InAs, accounts for the occurrence of an accumulation layer on InAs(110) but not elsewhere. Furthermore, it is shown that adsorbed hydrogen should be extremely hard to distinguish from native defects (particularly vacancies) using scanning tunneling and atomic force microscopy, on both InAs(110) and other III-V (110) surfaces.

Place, publisher, year, edition, pages
2013. Vol. 88, no 4, 045319- p.
Keyword [en]
Scanning-Tunneling-Microscopy, Semiconductor Surfaces, Gaas(110) Surfaces, Inp(110) Surfaces, Structural-Properties, Electronic-Structure, Si(111)-7x7 Surface, Gap(110) Surfaces, Vacancy Formation, Low-Temperatures
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-126882DOI: 10.1103/PhysRevB.88.045319ISI: 000322224800005ScopusID: 2-s2.0-84883146100OAI: diva2:642829
Swedish Research CouncilKnut and Alice Wallenberg Foundation

QC 20130823

Available from: 2013-08-23 Created: 2013-08-22 Last updated: 2013-08-23Bibliographically approved

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