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Lateral boron distribution in polycrystalline sic source materials
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
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2013 (English)In: Silicon Carbide And Related Materials 2012, Trans Tech Publications Inc., 2013, Vol. 740-742, 397-400 p.Conference paper (Refereed)
Abstract [en]

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 397-400 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
Boron, Dopant distribution, SIMS
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-127229DOI: 10.4028/ 000319785500093ScopusID: 2-s2.0-84874031010ISBN: 978-303785624-6OAI: diva2:643702
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg

QC 20130828

Available from: 2013-08-28 Created: 2013-08-28 Last updated: 2014-06-16Bibliographically approved

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Linnarsson, Margareta K.
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