Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT
2013 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, 974-977 p.Article in journal (Refereed) Published
Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage (>6 kV) and high current gain (β=50) have been achieved; meanwhile the device area with a constant emitter and base contact area (300×300 μm2) will be reduced by about 30%.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 974-977 p.
Bipolar junction transistors (BJTS), Junction termination extension (JTE), Non-ion implantation, Silicon carbide (SiC)
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-127221DOI: 10.4028/www.scientific.net/MSF.740-742.974ISI: 000319785500232ScopusID: 2-s2.0-84874051365ISBN: 978-303785624-6OAI: oai:DiVA.org:kth-127221DiVA: diva2:643971
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg
FunderStandUpSwedish Energy Agency
QC 20130829. QC 201603042013-08-292013-08-282016-03-04Bibliographically approved