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Polycrystalline SiC as source material for the growth of fluorescent SiC layers
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2013 (English)In: Silicon Carbide And Related Materials 2012, Trans Tech Publications Inc., 2013, Vol. 740-742, 39-42 p.Conference paper, Published paper (Refereed)
Abstract [en]

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 39-42 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
Silicon Carbide, Orientation, PVT, Polycrystalline, Doping
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-127226DOI: 10.4028/www.scientific.net/MSF.740-742.39ISI: 000319785500010Scopus ID: 2-s2.0-84874099768ISBN: 978-303785624-6 (print)OAI: oai:DiVA.org:kth-127226DiVA: diva2:644058
Conference
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012; St. Petersburg; Russian Federation; 2 September 2012 through 6 September 2012
Note

QC 20130829

Available from: 2013-08-29 Created: 2013-08-28 Last updated: 2014-06-16Bibliographically approved

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Linnarsson, Margareta K.

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