Polycrystalline SiC as source material for the growth of fluorescent SiC layers
2013 (English)In: Silicon Carbide And Related Materials 2012, Trans Tech Publications Inc., 2013, Vol. 740-742, 39-42 p.Conference paper (Refereed)
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 39-42 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Silicon Carbide, Orientation, PVT, Polycrystalline, Doping
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-127226DOI: 10.4028/www.scientific.net/MSF.740-742.39ISI: 000319785500010ScopusID: 2-s2.0-84874099768ISBN: 978-303785624-6OAI: oai:DiVA.org:kth-127226DiVA: diva2:644058
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012; St. Petersburg; Russian Federation; 2 September 2012 through 6 September 2012
QC 201308292013-08-292013-08-282014-06-16Bibliographically approved