Al+ implanted 4H-SiC: Improved electrical activation and ohmic contacts
2013 (English)In: Silicon Carbide and Related Materials 2012, Trans Tech Publications Inc., 2013, Vol. 740-742, 767-772 p.Conference paper (Refereed)
The p-type doping of high purity semi-insulating 4H-SiC by Al+ ion implantation and a conventional thermal annealing of 1950 °C/5 min has been studied for implanted Al concentration in the range of 1 ×1019 - 8 × 1020 cm-3 and 0.36 um thickness of the implanted layer. Sheet resistance in the range of 1.6 × 104 to 8.9 × 102 ω, corresponding to a resistivity in the range of 4.7 × 10-1 to 2.7 × 10-2 ωcm for increasing Al concentration have been obtained. Hall carrier density and mobility data in the temperature range of 140 - 600 K feature the transition from a valence band to an intra-band conduction for increasing Al concentration. In addition, the specific contact resistance of Ti/Al contacts on the 5 ×1019 cm-3 Al implanted specimen features a thermionic field effect conduction with a specific contact resistance in the 10-6 ωcm2 decade.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 767-772 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
4H-SiC, Aluminum doping, Hall carriers, Hall mobility, Ion implantation, Ohmic contacts
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-127224DOI: 10.4028/www.scientific.net/MSF.740-742.767ISI: 000319785500182ScopusID: 2-s2.0-84874029203ISBN: 978-303785624-6OAI: oai:DiVA.org:kth-127224DiVA: diva2:644061
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg
QC 201308292013-08-292013-08-282014-06-16Bibliographically approved