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On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
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2013 (English)In: Silicon Carbide and Related Materials 2012, Trans Tech Publications Inc., 2013, Vol. 740-742, 173-176 p.Conference paper (Refereed)
Abstract [en]

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 μm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 μs using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 173-176 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
Carrier lifetime, Chemical vapor deposition, Growth mechanism, High power devices, On-axis
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-127225DOI: 10.4028/ 000319785500041ScopusID: 2-s2.0-84874063162ISBN: 978-303785624-6OAI: diva2:644064
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012; St. Petersburg; Russian Federation; 2 September 2012 through 6 September 2012

QC 20130829

Available from: 2013-08-29 Created: 2013-08-28 Last updated: 2014-06-16Bibliographically approved

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Hallén, Anders
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