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Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates
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2013 (English)In: Silicon Carbide and Related Materials 2012, Trans Tech Publications Inc., 2013, Vol. 740-742, 185-188 p.Conference paper (Refereed)
Abstract [en]

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 185-188 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
Co-doping, Donor-acceptor pair luminescence, Fluorescent silicon carbide, Light conversion, Sublimation epitaxy
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-127223DOI: 10.4028/ 000319785500044ScopusID: 2-s2.0-84874075171ISBN: 978-303785624-6OAI: diva2:644072
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012; St. Petersburg; Russian Federation; 2 September 2012 through 6 September 2012

QC 20130829

Available from: 2013-08-29 Created: 2013-08-28 Last updated: 2014-06-16Bibliographically approved

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Linnarsson, Margareta K.
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