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Surface Passivation of CIGS Solar Cells by Atomic Layer Deposition
KTH, School of Industrial Engineering and Management (ITM), Energy Technology, Heat and Power Technology. (Advanced Fuel Cell and Solar Cell Group)
2013 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Thin film solar cells, such as Cu(In,Ga)Se2, have a large potential for cost reductions, due to their reduced material consumption. However, the lack in commercial success of thin film solar cells can be explained by lower efficiency compared to wafer-based solar cells. In this work, we have investigated the aluminum oxide as a passivation layer to reduce recombination losses in Cu(In,Ga)Se2 solar cells to increase their efficiency. Aluminum oxides have been deposited using spatial atomic layer deposition. Blistering caused by post-deposition annealing of thick enough alumina layer was suggested to make randomly arranged point contacts to provide an electrical conduction path through the device. Techniques such as current-voltage measurement, photoluminescence and external quantum efficiency were performed to measure the effectiveness of aluminum oxide as a passivation layer. Very high photoluminescence intensity was obtained for alumina layer between Cu(In,Ga)Se2/CdS hetero-junction after a heat treatment, which shows a reduction of defects at the absorber/buffer layers of the device.

Place, publisher, year, edition, pages
2013. , 42 p.
Keyword [en]
solar cells, CIGS, thin film, surface passivation, atomic layer deposition
National Category
Energy Systems
URN: urn:nbn:se:kth:diva-127430OAI: diva2:644290
Educational program
Master of Science - Environomical Pathways for Sustainable Energy Systems
2013-08-27, ITM_EGI_HPT_LIBRARY, KTH University, Stockholm, 14:30 (English)
Available from: 2013-09-11 Created: 2013-08-29 Last updated: 2013-09-11Bibliographically approved

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