A Comparative study of the bonding energy in adhesive wafer bonding
2013 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 23, no 8, 1-7 p.Article in journal (Refereed) Published
Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. The results are compared to the adhesion energies of wafers bonded with benzocyclobutene, both with and without adhesion promoter. The adhesion energies of the bonds are studied by blister tests, consisting of delaminating silicon lids bonded to silicon dies with etched circular cavities, using compressed nitrogen gas. The critical pressure needed for delamination is converted into an estimate of the bond adhesion energy. The fabrication of test dies and the evaluation method are described in detail. The mean bond energies of OSTE+ were determined to be 2.1 and 20 J m(-2) depending on the choice of the epoxy used. A mean bond energy of 1.5 J m(-2) was measured for mr-I 9150XP.
Place, publisher, year, edition, pages
2013. Vol. 23, no 8, 1-7 p.
Microfluidic Devices, SU-8, Benzocyclobutene, Level, BCB, wafer bonding, heterogeneous integration
Electrical Engineering, Electronic Engineering, Information Engineering Nano Technology
IdentifiersURN: urn:nbn:se:kth:diva-127487DOI: 10.1088/0960-1317/23/8/085019ISI: 000322221100021ScopusID: 2-s2.0-84881171360OAI: oai:DiVA.org:kth-127487DiVA: diva2:644705
FunderEU, European Research Council, MM 277879
QC 201309022013-09-022013-08-302015-06-26Bibliographically approved