Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 3, 033508- p.Article in journal (Refereed) Published
By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2013. Vol. 103, no 3, 033508- p.
Low-Frequency Noise, 1/F Noise, Pmosfets, Mobility, Gate, Si
Other Physics Topics
Research subject Electrical Engineering
IdentifiersURN: urn:nbn:se:kth:diva-127503DOI: 10.1063/1.4813850ISI: 000322146300110ScopusID: 2-s2.0-84881492355OAI: oai:DiVA.org:kth-127503DiVA: diva2:644749
FunderSwedish Foundation for Strategic Research
QC 201309022013-09-022013-08-302015-04-17Bibliographically approved