Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth and Characterization of Polycrystalline Indium Phosphide on Silicon
KTH, School of Information and Communication Technology (ICT).
2013 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

III-V thin film solar cells attract large interest among the scientific community as a highly efficient solar energy source. High cost of the III-V materials, however, is the fundamental limitation for using these materials as a household energy source. Integrating these materials on low cost and large area Si wafer both for photovoltaic and photonics application is a field of research that draw intense attention of the scientific community. The fundamental challenge to fabricate III-V materials directly on silicon wafers arises from the disparity in polarity, large lattice and thermal mismatch between the III-V semiconductors and Si.

In this work, we introduce a method to synthesize polycrystalline InP directly on silicon wafer by using In2O3 or In as intermediate material. The crystal quality and conversion degree of the intermediate material and the final poly-InP were analyzed by Powder X-ray Diffraction. Depending on the type of the intermediate material and substrate orientation (Si (100) or Si (111)), the crystallite size was found to be varying from 739 to 887 nm. The surface morphology of poly-InP was studied by using Atomic Force Microscopy. The root mean square surface roughness of the InP thin film was found to be varying from 314 to 1944 nm. Structural and optical qualities of intrinsic and sulfur doped InP layers were compared at different growth conditions (growth time, growth temperature, PH 3 source flow), intermediate material type(In2O3 and In) and substrate type (Si (100) and Si (111)). Within the investigated experimental parameter range, the higher PH 3 source flow at longer growth time improved the structural quality of InP layer grown on In 2O3 coated on silicon substrate, which also result in good optical quality. Comparison of structural and optical qualities of InP grown from In and indium oxide precoated substrates show that the former gave better quality InP. These achievements will be helpful in the realization of the high efficiency III-V solar cell on silicon substrate as a low cost option.

Place, publisher, year, edition, pages
2013. , 65 p.
Series
Trita-ICT-EX, 2013:110
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-128231OAI: oai:DiVA.org:kth-128231DiVA: diva2:647270
Educational program
Master of Science - Photonics
Examiners
Available from: 2013-09-11 Created: 2013-09-11 Last updated: 2013-09-11Bibliographically approved

Open Access in DiVA

fulltext(2318 kB)178 downloads
File information
File name FULLTEXT01.pdfFile size 2318 kBChecksum SHA-512
e4e099b4c637ad8df3c25367dc45f1e092508420a859b5df4b856f1824eca9b15eb30093d3e03d3a043815a5b302b737413607f1594df8b051e8a5bc3d7a9fb4
Type fulltextMimetype application/pdf

By organisation
School of Information and Communication Technology (ICT)
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 178 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

urn-nbn

Altmetric score

urn-nbn
Total: 85 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf