Molecular beam epitaxy growth of InSb1-xBix thin films
2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 378, 323-328 p.Article in journal (Refereed) Published
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
Place, publisher, year, edition, pages
2013. Vol. 378, 323-328 p.
Molecular beam epitaxy, Bismuth compounds, Semiconducting III-V materials, Semiconducting ternary compounds
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-128466DOI: 10.1016/j.jcrysgro.2012.12.085ISI: 000323355900082ScopusID: 2-s2.0-84885423665OAI: oai:DiVA.org:kth-128466DiVA: diva2:647750
17th International Conference on Molecular Beam Epitaxy (MBE), SEP 23-28, 2012, Nara, Japan
QC 201309122013-09-122013-09-122013-09-12Bibliographically approved