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Molecular beam epitaxy growth of InSb1-xBix thin films
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2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 378, 323-328 p.Article in journal (Refereed) Published
Abstract [en]

Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

Place, publisher, year, edition, pages
2013. Vol. 378, 323-328 p.
Keyword [en]
Molecular beam epitaxy, Bismuth compounds, Semiconducting III-V materials, Semiconducting ternary compounds
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-128466DOI: 10.1016/j.jcrysgro.2012.12.085ISI: 000323355900082Scopus ID: 2-s2.0-84885423665OAI: oai:DiVA.org:kth-128466DiVA: diva2:647750
Conference
17th International Conference on Molecular Beam Epitaxy (MBE), SEP 23-28, 2012, Nara, Japan
Note

QC 20130912

Available from: 2013-09-12 Created: 2013-09-12 Last updated: 2017-12-06Bibliographically approved

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Hallén, Anders

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