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Low-power nanophotonics: Material and device technology
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. (Laboratory of Photonics and Microwave Engineering)
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. (Laboratory of Photonics and Microwave Engineering)
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. (Laboratory of Photonics and Microwave Engineering)ORCID iD: 0000-0001-5967-2651
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0977-2598
2013 (English)In: Integrated Optics: Physics And Simulations, SPIE - International Society for Optical Engineering, 2013, 87810Q- p.Conference paper, Published paper (Refereed)
Abstract [en]

Development in photonics for communications and interconnects pose increasing requirements on reduction of footprint, power dissipation and cost, as well as increased bandwidth. Nanophotonics integrated photonics has been viewed as a solution to this, capitalizing on development in nanotechnology and an increased understanding of light matter interaction on the nanoscale. The latter can be exemplified by plasmonics and low dimensional semiconductors such as quantum dots (QDs). In this scenario the development of improved electrooptic materials is of great importance, the electrooptic polymers being an example, since they potentially offer superior properties for optical phase modulators in terms of power and integratability. Phase modulators are essential for e. g. the rapidly developing advanced modulation formats, since phase modulation basically can generate any type of modulation. The electrooptic polymers, in combination with plasmonics nanoparticle array waveguides or nanostructured hybrid plasmonic media can give extremely compact and low power dissipation modulators. Low-dimensional semiconductors, e. g. in the shape of QDs, can be employed for modulation or switching functions, offering possibilities for scaling to 2 or 3 dimensions for advanced switching functions. In both the high field confinement plasmonics and QDs, the nanosizing is due to near-field interactions, albeit being of different physical origin in the two cases. Epitaxial integration of III-V structures on Si plays an important role in developing high-performance light sources on silicon, eventually integrated with silicon electronics. A brief remark on all-optical vs. electronically controlled optical switching systems is also given.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2013. 87810Q- p.
Series
Proceedings of SPIE, ISSN 0277-786X ; 8781
Keyword [en]
Nanophotonics, low-power photonics, optical switch, electro-optic polymer, plasmonics, Forster coupling, silicon photonics, III-V heteroepitaxy on silicon
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-128503DOI: 10.1117/12.2018893ISI: 000323312700018Scopus ID: 2-s2.0-84880887388ISBN: 978-0-8194-9583-9 (print)OAI: oai:DiVA.org:kth-128503DiVA: diva2:648000
Conference
Conference on Integrated Optics - Physics and Simulations, APR 17-18, 2013, Prague, Czech Republic
Note

QC 20130913

Available from: 2013-09-13 Created: 2013-09-12 Last updated: 2013-09-13Bibliographically approved

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Wosinski, LechLourdudoss, Sebastian

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Thylén, LarsHolmström, PetterWosinski, LechLourdudoss, Sebastian
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