Graphene for microelectronics: Can it make a difference?
2012 (English)In: 2012 Proceedings of the ESSCIRC (ESSCIRC), IEEE , 2012, 25-27 p.Conference paper (Refereed)
Benchmarking figures for graphene show remarkable properties like ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm2/Vs [1, 2]. When graphene is integrated and processed, however, defects in the graphene and its dielectric environment dominate device performance [3, 4]. Furthermore, the lack of a band gap limits the applicability of graphene field effect transistors (GFETs) for logic applications. Yet, there are many options for graphene to make a difference in the future of microelectronics, many of which can be attributed to the More than Moore domain defined in the ITRS. These will be discussed in this talk.
Place, publisher, year, edition, pages
IEEE , 2012. 25-27 p.
, IEEEESSCIRC Proceedings, ISSN 1930-8833
Ballistic conductance, Device performance, Logic applications
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-129091DOI: 10.1109/ESSCIRC.2012.6341247ScopusID: 2-s2.0-84870818870ISBN: 978-146732212-6OAI: oai:DiVA.org:kth-129091DiVA: diva2:650009
38th European Solid State Circuits Conference, ESSCIRC 2012; Bordeaux; France; 17 September 2012 through 21 September 2012
QC 201309192013-09-192013-09-192013-09-19Bibliographically approved