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Graphene for microelectronics: Can it make a difference?
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2012 (English)In: 2012 Proceedings of the ESSCIRC (ESSCIRC), IEEE , 2012, 25-27 p.Conference paper, Published paper (Refereed)
Abstract [en]

Benchmarking figures for graphene show remarkable properties like ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm2/Vs [1, 2]. When graphene is integrated and processed, however, defects in the graphene and its dielectric environment dominate device performance [3, 4]. Furthermore, the lack of a band gap limits the applicability of graphene field effect transistors (GFETs) for logic applications. Yet, there are many options for graphene to make a difference in the future of microelectronics, many of which can be attributed to the More than Moore domain defined in the ITRS. These will be discussed in this talk.

Place, publisher, year, edition, pages
IEEE , 2012. 25-27 p.
Series
IEEEESSCIRC Proceedings, ISSN 1930-8833
Keyword [en]
Ballistic conductance, Device performance, Logic applications
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-129091DOI: 10.1109/ESSCIRC.2012.6341247Scopus ID: 2-s2.0-84870818870ISBN: 978-146732212-6 (print)OAI: oai:DiVA.org:kth-129091DiVA: diva2:650009
Conference
38th European Solid State Circuits Conference, ESSCIRC 2012; Bordeaux; France; 17 September 2012 through 21 September 2012
Note

QC 20130919

Available from: 2013-09-19 Created: 2013-09-19 Last updated: 2013-09-19Bibliographically approved

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