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Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2012 (English)In: Proc SPIE Int Soc Opt Eng, 2012Conference paper (Refereed)
Abstract [en]

We report on the optical and structural characterization of InSb QDs in InAs matrix, grown on InAs (100) substrates, for infrared photodetection. InSb has 7% lattice mismatch with InAs forming strained QDs, which are promising for longwave IR applications, due to their type-II band alignment. This report contains material development results of InSb QDs for increasing their emission wavelength towards long-wave IR region. Samples were grown by two techniques of MBE and MOVPE, with different InSb coverage on InAs (100) substrates. Structures grown by MBE reveal QD related photoluminescence at 4 μm. AFM investigations of the MBE grown structures showed uncapped dots of ∼ 35 nm in size and ∼ 3 nm in height, with a density of about 2 × 1010 cm -2. Cross-section TEM investigations of buried InSb layers grown by MBE showed coherently strained QDs for nominal InSb coverage in the range of 1.6 - 2 monolayers (MLs). Layers with InSb coverage more than 2MLs contain relaxed QDs with structural defects due to large amount of strain between InSb and InAs. Samples with such large dots did not show any InSb related luminescence. The MOVPE grown InSb samples exhibit a strong QD related emission between 3.8 to 7.5 μm, depending on the amount of InSb coverage and other growth parameters. We report the longest wavelength observed so far in this material system.

Place, publisher, year, edition, pages
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 8439
Keyword [en]
InAs, Infrared, InSb QDs, MBE, MOVPE, Photodetector, Photoluminescence, TEM, AFM, Band alignments, Emission wavelength, Grown structures, Growth parameters, Long waves, Material development, Material systems, Photo detection, Structural characterization, Structural defect, Indium arsenide, Infrared radiation, Metallorganic vapor phase epitaxy, Molecular beam epitaxy, Monolayers, Photodetectors, Substrates, Transmission electron microscopy, Indium antimonides
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-128705DOI: 10.1117/12.922396ISI: 000305390100044ScopusID: 2-s2.0-84861949186ISBN: 9780819491312OAI: diva2:652321
Optical Sensing and Detection II, 16 April 2012 through 19 April 2012, Brussels

QC 20130930

Available from: 2013-09-30 Created: 2013-09-16 Last updated: 2013-09-30Bibliographically approved

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Karim, AmirGustafsson, OscarHammar, Mattias
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ReferencesLink to record
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