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Nb2O5 nanofiber memristor
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 5, 053111- p.Article in journal (Refereed) Published
Abstract [en]

Non-woven bead-free 100 mu m long and 80-200 nm in diameter highly crystalline orthorhombic T-Nb2O5 nanofibers were sintered by sol-gel assisted electrospinning technique. Electrical and dielectric spectroscopy tests of individual fibers clamped onto Pt coated Si substrate were performed using a spreading resistance mode of atomic force microscope. Reproducible resistive switching with ON-OFF resistance ratio as high as 2 x 10(4) has a bipolar character, starts with a threshold voltage of 0.8-1.7 V, and follows by continuous growth of conductivity. Resistive memory effect is associated with a voltage-driven accumulation/depletion of oxygen vacancies at Nb2O5/Pt cathode interface. Poole-Frenkel emission from the electronic states trapped at reduced NbOx complexes determines a shape of Nb2O5/Pt diode I-V characteristics. Simple thermodynamic model explains a threshold character of switching, relates experimentally observed characteristics in low and high resistive states, and gives a reasonable estimate of the concentration of oxygen vacancies.

Place, publisher, year, edition, pages
2013. Vol. 103, no 5, 053111- p.
Keyword [en]
Electrospinning techniques, High resistive state, IV characteristics, Poole-Frenkel emission, Resistive switching, Spreading resistance, Thermodynamic model, Threshold characters
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-129473DOI: 10.1063/1.4817302ISI: 000322723000082ScopusID: 2-s2.0-84882300094OAI: diva2:652714
Swedish Research Council

QC 20131001

Available from: 2013-10-01 Created: 2013-09-30 Last updated: 2013-10-01Bibliographically approved

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Grishin, Alexander M.Jalalian, Abolfazl
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