Change search
ReferencesLink to record
Permanent link

Direct link
Formation of nanoscale structures by inductively coupled plasma etching
KTH, School of Engineering Sciences (SCI), Applied Physics, Biomedical and X-ray Physics.ORCID iD: 0000-0003-2745-6289
Show others and affiliations
2012 (English)In: International Conference Micro- and Nano-Electronics 2012, SPIE - International Society for Optical Engineering, 2012, 870002- p.Conference paper (Refereed)
Abstract [en]

This paper will review the top down technique of ICP etching for the formation of nanometer scale structures. The increased difficulties of nanoscale etching will be described. However it will be shown and discussed that inductively coupled plasma (ICP) technology is well able to cope with the higher end of the nanoscale: features from 100nm down to about 40nm are relatively easy with current ICP technology. It is the ability of ICP to operate at low pressure yet with high plasma density and low (controllable) DC bias that helps greatly compared to simple reactive ion etching (RIE) and, though continual feature size reduction is increasingly challenging, improvements to ICP technology as well as improvements in masking are enabling sub-10nm features to be reached. Nanoscale ICP etching results will be illustrated in a range of materials and technologies. Techniques to facilitate etching (such as the use of cryogenic temperatures) and techniques to improve the mask performance will be described and illustrated.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2012. 870002- p.
, Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 8700
Keyword [en]
Cryogenic, Etching, ICP, Nanoscale, Nanotechnology, Cryogenic temperatures, Feature sizes, Inductively coupled plasma (ICP), Materials and technologies, Nano scale, Nanometer scale structure, Nanoscale structure, Cryogenics, Inductively coupled plasma, Plasma density, Technology, Nanoelectronics
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-129812DOI: 10.1117/12.2017609ISI: 000322818600001ScopusID: 2-s2.0-84880210643ISBN: 978-081949487-0OAI: diva2:653902
International Conference on Micro- and Nanoelectronics 2012, ICMNE 2012; Zvenigorod; Russian Federation; 1 October 2012 through 5 October 2012

QC 20131007

Available from: 2013-10-07 Created: 2013-10-04 Last updated: 2013-10-07Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Holmberg, Anders
By organisation
Biomedical and X-ray Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 20 hits
ReferencesLink to record
Permanent link

Direct link