Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 11, 111107- p.Article in journal (Refereed) Published
Carrier recombination in single 10 nm wide m-plane homoepitaxial In0.15Ga0.85N/GaN quantum wells was examined by time-resolved photoluminescence. The radiative recombination time at 3.5 K was found to be short, about 0.5 ns. This value and the single-exponential luminescence decay show that the localized exciton recombination is not affected by the in-plane electric field. At room temperature, the nonradiative recombination was prevalent. The data indicate that the nonradiative recombination proceeds via efficient recombination centers. Complexes of Ga vacancies with oxygen and/or related interface defects are suggested to play this role and thus provide a direction for future improvements in materials' quality.
Place, publisher, year, edition, pages
2013. Vol. 103, no 11, 111107- p.
Electric fields, Gallium, Interfaces (materials)
IdentifiersURN: urn:nbn:se:kth:diva-131722DOI: 10.1063/1.4820839ISI: 000324495000007ScopusID: 2-s2.0-84884258865OAI: oai:DiVA.org:kth-131722DiVA: diva2:656910
FunderSwedish Energy Agency, 36652-1Knut and Alice Wallenberg Foundation
QC 201310172013-10-172013-10-172013-10-17Bibliographically approved