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Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-4606-4865
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 11, 111107- p.Article in journal (Refereed) Published
Abstract [en]

Carrier recombination in single 10 nm wide m-plane homoepitaxial In0.15Ga0.85N/GaN quantum wells was examined by time-resolved photoluminescence. The radiative recombination time at 3.5 K was found to be short, about 0.5 ns. This value and the single-exponential luminescence decay show that the localized exciton recombination is not affected by the in-plane electric field. At room temperature, the nonradiative recombination was prevalent. The data indicate that the nonradiative recombination proceeds via efficient recombination centers. Complexes of Ga vacancies with oxygen and/or related interface defects are suggested to play this role and thus provide a direction for future improvements in materials' quality.

Place, publisher, year, edition, pages
2013. Vol. 103, no 11, 111107- p.
Keyword [en]
Electric fields, Gallium, Interfaces (materials)
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-131722DOI: 10.1063/1.4820839ISI: 000324495000007Scopus ID: 2-s2.0-84884258865OAI: oai:DiVA.org:kth-131722DiVA: diva2:656910
Funder
Swedish Energy Agency, 36652-1Knut and Alice Wallenberg Foundation
Note

QC 20131017

Available from: 2013-10-17 Created: 2013-10-17 Last updated: 2017-12-06Bibliographically approved

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Marcinkevicius, Saulius

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