Photovoltaic properties of Si-NiO structure
2012 (English)In: Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN 1862-6351, Vol. 9, no 7, 1597-1599 p.Article in journal (Refereed) Published
The investigation of the photovoltaic properties of a Si-NiO structure was carried out. NiO films were prepared by thermal oxidation of metallic nickel at different temperatures. The load and luminous characteristics were obtained, and on the basis of these measurements the efficiency, fill factor, short circuit current and open-circuit voltage were determined. Finally, possible mechanisms of the observed phenomena, as well as the possibility of their use for optoelectronic devices, are briefly discussed.
Place, publisher, year, edition, pages
2012. Vol. 9, no 7, 1597-1599 p.
Phovoltaic cell, Schottky, Si-NiO
IdentifiersURN: urn:nbn:se:kth:diva-131886DOI: 10.1002/pssc.201100704ISI: 000306479300020ScopusID: 2-s2.0-84864015598OAI: oai:DiVA.org:kth-131886DiVA: diva2:658138
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI) Location: Royal Inst Technol (KTH), Stockholm, Sweden Date: JUN 19-23, 2011
QC 201310212013-10-212013-10-182013-10-21Bibliographically approved