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Photovoltaic properties of Si-NiO structure
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. (Condensed Matter Physics)
2012 (English)In: Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN 1862-6351, Vol. 9, no 7, 1597-1599 p.Article in journal (Refereed) Published
Abstract [en]

The investigation of the photovoltaic properties of a Si-NiO structure was carried out. NiO films were prepared by thermal oxidation of metallic nickel at different temperatures. The load and luminous characteristics were obtained, and on the basis of these measurements the efficiency, fill factor, short circuit current and open-circuit voltage were determined. Finally, possible mechanisms of the observed phenomena, as well as the possibility of their use for optoelectronic devices, are briefly discussed.

Place, publisher, year, edition, pages
2012. Vol. 9, no 7, 1597-1599 p.
Keyword [en]
Phovoltaic cell, Schottky, Si-NiO
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-131886DOI: 10.1002/pssc.201100704ISI: 000306479300020Scopus ID: 2-s2.0-84864015598OAI: oai:DiVA.org:kth-131886DiVA: diva2:658138
Conference
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI) Location: Royal Inst Technol (KTH), Stockholm, Sweden Date: JUN 19-23, 2011
Note

QC 20131021

Available from: 2013-10-21 Created: 2013-10-18 Last updated: 2013-10-21Bibliographically approved

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