Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator
2014 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 25, no 15, 155301- p.Article in journal (Refereed) Published
An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+delta) (-0.04 <= delta <= +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+delta) are comparable (greater than 7 G Omega cm) and a measured breakdown field is greater than 400 V mu m(-1). Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.
Place, publisher, year, edition, pages
2014. Vol. 25, no 15, 155301- p.
gas-assisted EBID, 3D nanopatterning, high-purity insulator, tetraethyl orthosilicate (TEOS), purification
Other Materials Engineering
IdentifiersURN: urn:nbn:se:kth:diva-132364DOI: 10.1088/0957-4484/25/15/155301ISI: 000333394100005ScopusID: 2-s2.0-84897861464OAI: oai:DiVA.org:kth-132364DiVA: diva2:659577
FunderSwedish Research CouncilCarl Tryggers foundation
QC 20140508. Updated from submitted to published.2013-10-252013-10-252014-05-08Bibliographically approved