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Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-4606-4865
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 13, 131116- p.Article in journal (Refereed) Published
Abstract [en]

Scanning near-field optical spectroscopy was applied to semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence on the growth conditions. In the most uniform QW, photoluminescence (PL) spectra were found to be narrow with small peak wavelength and spectral width variations. A QW grown at reduced temperature showed sub-micrometer size PL features aligned along the a axis and caused by nonuniform In incorporation at surface undulations. At extended defects, complex and strongly varying near-field spectra were observed and tentatively assigned to QW segments of different orientations around these defects.

Place, publisher, year, edition, pages
2013. Vol. 103, no 13, 131116- p.
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Identifiers
URN: urn:nbn:se:kth:diva-133259DOI: 10.1063/1.4823589ISI: 000325284500016Scopus ID: 2-s2.0-84885010330OAI: oai:DiVA.org:kth-133259DiVA: diva2:660498
Funder
Swedish Energy Agency, 36652-1Knut and Alice Wallenberg Foundation
Note

QC 20131030

Available from: 2013-10-30 Created: 2013-10-29 Last updated: 2017-12-06Bibliographically approved

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Marcinkevičius, Saulius

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