High-Efficiency Power Conversion Using Silicon Carbide Power Electronics
2013 (English)In: Proc. of International Conference on silicon carbide and related materials (ICSCRM) 2013, Miyazaki, Japan, Sept. 29–Oct. 4, 2013, Trans Tech Publications Inc., 2013, 1083-1088 p.Conference paper (Refereed)
The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 1083-1088 p.
, Materials Science Forum, ISSN 0255-5476 ; 778/780
Power Electronics, Inverter, dc-dc converter, gate-drive circuit, reverse conduction, SiC JFET, SiC BJT, SiC MOSFET, parallel connection, modular multilevel converter
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-133315DOI: 10.4028/www.scientific.net/MSF.778-780.1083ISI: 000336634100257ScopusID: 2-s2.0-84896095819ISBN: 978-303835010-1OAI: oai:DiVA.org:kth-133315DiVA: diva2:660508
International Conference on silicon carbide and related materials (ICSCRM) 2013, Miyazaki, Japan, Sept. 29–Oct. 4, 2013
QC 201406262013-10-302013-10-302016-02-26Bibliographically approved